Thin Film Ferroelectric Materials and Devices (Electronic Materials: Science and... by R. Ramesh

Thin Film Ferroelectric Materials and Devices (Electronic Materials: Science and...

Features

Cover Type: Hard Cover with 256 pages

Published by: Springer

Edition: 1st Edition September 30, 1997

Written in: English

ISBN 10 Number: 0792399935

ISBN 13 Number: 978-0792399933

Book Dimensions: 9.4 x 6 x 0.9 inches

Weighs: 1.1 pounds

Product Description
Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAMs) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAMs). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation.
The primary focus of Thin Film Ferroelectric Materials and Devices is to expound the materials and device aspects of these technologies. All the chapters have been written by leaders in their fields. Therefore, each chapter provides a comprehensive treatment of a specific topic of relevance to these two technologies.
Thin Film Ferroelectric Materials and Devices will be of great value to materials and device scientists, device and process engineers, students, and postdoctoral associates. Furthermore, this compilation will serve as a concise introduction for new entrants to this exciting field.

Book Info
A compilation of current research and development in two very important ferroelectric device technologies - ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAM's). DLC: Random access memory.

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Updated on 6-3-2008.